论文信息 - Analysis of Transient Gate-Source OverVoltages in Silicon Carbide MOSFET Power Devices - 字舞流文

Analysis of Transient Gate-Source OverVoltages in Silicon Carbide MOSFET Power Devices

M. Pulvirenti | M. Cacciato | G. Scelba | G. Scarcella | M. Nania | G. Montoro | L. Salvo | R. Scollo