(Ta2O5)0.92(TiO2)0.08 thin films prepared by pulsed laser deposition

(formula available in paper)thin films have been deposited on Si substrate by 248 nm pulsed laser deposition in O2 gas environment. The structure and properties of (formula available in paper)polycrystalline thin film were investigated as a function of the deposition temperature, oxygen pressure and the substrate-target distance. The film with the thickness of 190 nm showed a dielectric constant (epsilon) r equals 56.