Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
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[1] Andreas Stintz,et al. Low-threshold quantum dot lasers with 201 nm tuning range , 2000 .
[2] J. Laskar,et al. In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties , 1999 .
[3] Nikolai N. Ledentsov,et al. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots , 1997 .
[4] Sanjay Krishna,et al. Intersubband gain and stimulated emission in long-wavelength (/spl lambda/=13 /spl mu/m) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices , 2001 .
[5] Dynamic linewidth of tunnelling injection laser , 1994 .
[6] Dieter Bimberg,et al. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers , 2001 .
[7] S. Chua,et al. Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots , 1998 .
[8] Jasprit Singh,et al. Carrier capture and relaxation in narrow quantum wells , 1994 .
[9] P. Bhattacharya,et al. A "cold" InP-based tunneling injection laser with greatly reduced Auger recombination and temperature dependence , 1995, IEEE Photonics Technology Letters.
[10] Johann Peter Reithmaier,et al. High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 /spl mu/m , 2001 .
[11] Russell D. Dupuis,et al. Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures , 2001 .
[12] Andreas Stintz,et al. Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .
[13] J. Laskar,et al. Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain , 1998, IEEE Photonics Technology Letters.
[14] Serge Luryi,et al. Tunneling-injection quantum-dot laser: ultrahigh temperature stability , 2001 .
[15] Xiangkun Zhang,et al. Tunneling injection lasers: a new class of lasers with reduced hot carrier effects , 1996 .
[16] D. Klotzkin,et al. Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers , 1997, IEEE Photonics Technology Letters.
[17] N. Ledentsov,et al. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers , 1996 .
[18] Diana L. Huffaker,et al. Quantum dimensionality, entropy, and the modulation response of quantum dot lasers , 2000 .