Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature

By utilizing tunnel injection of electrons, first demonstrated in quantum well lasers, we have measured enhanced small-signal modulation bandwidth, f−3dB, and reduced temperature sensitivity of the threshold current, characterized by T0, in In0.4Ga0.6As/GaAs self-organized quantum dot ridge waveguide lasers. Values of f−3dB=15 GHz at 283 K and T0=237 K for 318⩾T⩾278 are measured in these devices. The differential gain at 283 K is dg/dn≅8.5×10−14 cm2 and the gain compression factor e=4.5×10−17 cm3.

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