论文信息 - Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate - 字舞流文

Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate

Baoshun Zhang | Xuguang Deng | Jun Han | Yanhui Xing | F. Yaming | K. Zhao | Kai Wang | Lijiang Guo | Y. Zhang