Driving DSA into volume manufacturing

Directed Self-Assembly (DSA) is being extensively evaluated for application in semiconductor process integration.1-7 Since 2011, the number of publications on DSA at SPIE has exploded from roughly 26 to well over 80, indicating the groundswell of interest in the technology. Driving this interest are a number of attractive aspects of DSA including the ability to form both line/space and hole patterns at dimensions below 15 nm, the ability to achieve pitch multiplication to extend optical lithography, and the relatively low cost of the processes when compared with EUV or multiple patterning options. Tokyo Electron Limited has focused its efforts in scaling many laboratory demonstrations to 300 mm wafers. Additionally, we have recognized that the use of DSA requires specific design considerations to create robust layouts. To this end, we have discussed the development of a DSA ecosystem that will make DSA a viable technology for our industry, and we have partnered with numerous companies to aid in the development of the ecosystem. This presentation will focus on our continuing role in developing the equipment required for DSA implementation specifically discussing defectivity reduction on flows for making line-space and hole patterns, etch transfer of DSA patterns into substrates of interest, and integration of DSA processes into larger patterning schemes.

[1]  Mark Somervell,et al.  Pattern scaling with directed self assembly through lithography and etch process integration , 2012, Advanced Lithography.

[2]  Lieve Van Look,et al.  Defect reduction and defect stability in IMEC's 14nm half-pitch chemo-epitaxy DSA flow , 2014, Advanced Lithography.

[3]  P. Nealey,et al.  Block copolymers and conventional lithography , 2006 .

[4]  Geert Vandenberghe,et al.  Implementation of templated DSA for via layer patterning at the 7nm node , 2015, Advanced Lithography.

[5]  Seiji Nagahara,et al.  Advances in directed self assembly integration and manufacturability at 300 mm , 2013, Advanced Lithography.

[6]  Christopher K. Ober,et al.  Block copolymer patterns and templates , 2006 .

[7]  Makoto Muramatsu,et al.  Nanopatterning of diblock copolymer directed self-assembly lithography with wet development , 2012 .

[8]  Roel Gronheid,et al.  Comparison of directed self-assembly integrations , 2012, Other Conferences.

[9]  Joy Y. Cheng,et al.  Simple and versatile methods to integrate directed self-assembly with optical lithography using a polarity-switched photoresist. , 2010, ACS nano.

[10]  H.-S. Philip Wong,et al.  Block copolymer directed self-assembly enables sublithographic patterning for device fabrication , 2012, Advanced Lithography.

[11]  Dieter Van Den Heuvel,et al.  Defect source analysis of directed self-assembly process (DSA of DSA) , 2013, Advanced Lithography.

[12]  P. Nealey,et al.  Epitaxial self-assembly of block copolymers on lithographically defined nanopatterned substrates , 2003, Nature.

[13]  Seiji Nagahara,et al.  High-volume manufacturing equipment and processing for directed self-assembly applications , 2014, Advanced Lithography.

[14]  C. Ross,et al.  Templated Self‐Assembly of Block Copolymers: Top‐Down Helps Bottom‐Up , 2006 .

[15]  William D. Hinsberg,et al.  Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab , 2011, Advanced Lithography.

[16]  Makoto Muramatsu,et al.  Computational analysis of hole placement errors for directed self-assembly , 2015, Advanced Lithography.

[17]  Takayuki Toshima,et al.  Contact hole shrink process using graphoepitaxial directed self-assembly lithography , 2013 .

[18]  Jian Yin,et al.  The SMARTTM Process for Directed Block Co-Polymer Self-Assembly , 2013 .

[19]  Akiteru Ko,et al.  Fabrication of 28nm pitch Si fins with DSA lithography , 2013, Advanced Lithography.

[20]  Hengpeng Wu,et al.  All track directed self-assembly of block copolymers: process flow and origin of defects , 2012, Advanced Lithography.

[21]  Daisuke Kawamura,et al.  Nanopatterning of diblock copolymer directed self-assembly lithography with wet development , 2011, Advanced Lithography.