Modulation doping in ZnO nanorods for electrical nanodevice applications

We introduce a modulation-doping method to control electrical characteristics of ZnO nanorods. Compared with a conventional homogeneous doping method, the modulation-doping method generates localized doping layers along the circumference in ZnO nanorods, useful for many device applications. Here, we investigated electrical, structural, and optical characteristics of Ga-doped ZnO nanorods with the dopant modulation layers. Electrical conductivity of ZnO nanorods was controlled by changing either dopant mole fraction or the number of modulation-doped layers. Furthermore, the modulation-doped nanorod field effect transistors exhibited precisely controlled conductance in the order of magnitude without degradation of electron mobility. The effects of the doping on structural and optical characteristics of the nanorods are also discussed.

[1]  G. Yi,et al.  ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications , 2009 .

[2]  Young Joon Hong,et al.  Shape‐Controlled Nanoarchitectures Using Nanowalls , 2009 .

[3]  W. Park.  Electrical Properties of Delta-Doped Silicon-Nanowire Field-Effect Transistors , 2008 .

[4]  Young Joon Hong,et al.  Surface morphology and growth mechanism of catalyst‐free ZnO and Mgx Zn1–x O nanorods , 2008 .

[5]  Shui-Tong Lee,et al.  Tunable n‐Type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays , 2008 .

[6]  Walter Riess,et al.  Nanowire-based one-dimensional electronics , 2006 .

[7]  U. Gösele,et al.  Vapour-transport-deposition growth of ZnO nanostructures: switch between c-axial wires and a-axial belts by indium doping , 2006 .

[8]  S. Chang,et al.  Influence of the Formation of the Second Phase in ZnO ∕ Ga Nanowire Systems , 2006 .

[9]  G. M. Stocks,et al.  Localization/Quasi-delocalization transitions and quasi-mobility-edges in shell-doped nanowires. , 2006, Nano letters.

[10]  W. Park,et al.  ZnO Nanorod Logic Circuits , 2005, Advanced materials.

[11]  Jin Suk Kim,et al.  Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors , 2004 .

[12]  H. Morkoç,et al.  Excitonic fine structure and recombination dynamics in single-crystalline ZnO , 2004 .

[13]  Jürgen Christen,et al.  Bound exciton and donor–acceptor pair recombinations in ZnO , 2004 .

[14]  Wei Jiang,et al.  Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition , 2003 .

[15]  Gyu-Chul Yi,et al.  Excitonic emissions observed in ZnO single crystal nanorods , 2003 .

[16]  Phaedon Avouris,et al.  Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts , 2003 .

[17]  Gyu-Chul Yi,et al.  Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods , 2002 .

[18]  David C. Look,et al.  Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy , 2000 .

[19]  Herbert Shea,et al.  Single- and multi-wall carbon nanotube field-effect transistors , 1998 .