Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
暂无分享,去创建一个
Eli Yablonovitch | Catherine Caneau | I. Schnitzer | T. J. Gmitter | E. Yablonovitch | C. Caneau | I. Schnitzer | T. Gmitter
[1] T. Gmitter,et al. Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures. , 1988, Physical review letters.
[2] H. Casey,et al. Heterostructure lasers , 1978 .
[3] H. F. MacMillan,et al. Microsecond lifetimes and low interface recombination velocities in moderately doped n‐GaAs thin films , 1992 .
[4] Eli Yablonovitch,et al. Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond , 1991 .
[5] W. N. Carr,et al. ONE‐WATT GaAs p‐n JUNCTION INFRARED SOURCE , 1963 .
[6] E. Yablonovitch,et al. As2S3/GaAs, a new amorphous/crystalline heterojunction for the III‐V semiconductors , 1990 .
[7] Yeong-Her Wang,et al. Resonant cavity light‐emitting diode , 1992 .
[8] R. J. Bell,et al. Optical properties of Au, Ni, and Pb at submillimeter wavelengths. , 1987, Applied optics.
[9] S. Machida,et al. Photon Number Squeezed States in Semiconductor Lasers , 1992, Science.
[10] E. Yablonovitch,et al. Extreme selectivity in the lift‐off of epitaxial GaAs films , 1987 .
[11] Jacques I. Pankove,et al. Optical Processes in Semiconductors , 1971 .
[12] E. Yablonovitch. Statistical ray optics , 1982 .
[13] R. J. Nelson,et al. Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs , 1978 .