Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers

Efficient wavelength switching is demonstrated in an In0.4Ga0.6As/GaAs self-organized quantum dot laser with an intracavity absorber section. A wavelength shift of ∼15 nm, believed to be caused by a shift of lasing between the bound states of the quantum dot, is obtained for a bias change of 6 V.