Refractive index of InGaN/GaN quantum well

In this article, the optical properties of the InxGa1−xN/GaN quantum well (QW) are investigated. The refractive index spectrum of a QW is essential to the design and implementation of optoelectronic devices. Yet, the refractive index of the InGaN/GaN QW system over a wide spectral range has been unavailable so far. This article presents a comprehensive model, which includes the exciton effect and most of the major critical points, to calculate the complex index of refraction of the InGaN/GaN QW at room temperature. The calculations have been performed for QW’s with various alloy compositions and well widths in the spectral range from 1 to 9 eV. The model presented here fully considers transitions near the band edge and above barrier gap contributions.

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