论文信息 - Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes

Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes

Data are presented demonstrating the formation of stable, device‐quality native oxides from high Al composition In0.5(AlxGa1−x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500 °C). The oxide exhibits excellent current‐blocking characteristics and is employed to fabricate continuous room‐temperature stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P double‐heterostructure laser diodes.

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