Associative and data processing Mbit-DRAM

The extension of a conventional Mbit-DRAM to an associative and data processing DRAM (ADRAM) using an additional multifunction circuit has been investigated. This circuit allows the application of associative or logical functions to many cells simultaneously in one memory cycle. The organization (e.g. string length, cascading, data structure, and masking) of the ADRAM is highly flexible and can be parameterized. An estimation based on a 4-Mb DRAM shows that the compare rate is 30*10/sup 9/ b/s.<<ETX>>