A low-power multichannel receiver for D-band sensing applications in a 0.13µm SiGe BiCMOS technology

This paper presents a low-power multichannel receiver front-end for D-band applications implemented in a 0.13µm SiGe BiCMOS technology, featuring HBTs with fT/fmax of 250/360 GHz. The receivers are driven by a V to D-band frequency doubler via an external local oscillator signal. Measurements on a breakout chip of the doubler shows a maximum conversion gain and output power of 5 dB and −1 dBm respectively. The maximum suppression of the V-band signal at the output is better than 25 dBc. A minimum single sideband noise figure of 11.5 dB, conversion gain greater than 18 dB and an input-referred 1-dB compression point of −7 dBm is obtained for the receivers for input signals between 120 and 132 GHz. The channel-channel gain and noise figure variation remain below 1 dB and the IF channel-to-channel isolation is better than 40 dB. The entire circuit consumes 90 mA from a 3.3 V power supply.

[1]  Robert Weigel,et al.  A D-band transceiver front-end for broadband applications in a 0.35μm SiGe bipolar technology , 2014, 2014 IEEE Radio Frequency Integrated Circuits Symposium.

[2]  Chau-Ching Chiong,et al.  A GaAs-based HBT 31-GHz frequency doubler with an on-chip voltage , 2008, 2008 Asia-Pacific Microwave Conference.

[3]  A. Stelzer,et al.  A sige-based 140-GHz four-channel radar sensor with digital beamforming capability , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

[4]  Herbert Knapp,et al.  Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology , 2011, IEEE Journal of Solid-State Circuits.

[5]  P. Chevalier,et al.  Towards THz SiGe HBTs , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[6]  J. Kirchgessner,et al.  A multi-channel Rx for 76.5GHz automotive radar applications with 55dB IF channel-to-channel isolation , 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

[8]  B. Heinemann,et al.  Half-Terahertz SiGe BiCMOS technology , 2012, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.