Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.

[1]  Y. Shuai,et al.  Resistive switching behavior in single crystal SrTiO3 annealed by laser , 2016 .

[2]  Guoqiang Li,et al.  Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO3/Pt cells , 2011 .

[3]  E. Ahmed,et al.  Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices , 2015 .

[4]  T. Pan,et al.  Switching Behavior in Rare-Earth Films Fabricated in Full Room Temperature , 2012, IEEE Transactions on Electron Devices.

[5]  B. Kahng,et al.  Random Circuit Breaker Network Model for Unipolar Resistance Switching , 2008 .

[6]  Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure , 2014 .

[7]  Xiaoping Li,et al.  Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film , 2018, Solid-State Electronics.

[8]  V. Karpov,et al.  OFF State Conduction in Filamentary RRAM , 2019, IEEE Electron Device Letters.

[9]  Jung-Hui Chen,et al.  Charge Quantity Influence on Resistance Switching Characteristic During Forming Process , 2013, IEEE Electron Device Letters.

[10]  Kuan‐Chang Chang,et al.  Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments , 2017, Materials.

[11]  V. R. Reddy,et al.  Electrical and frequency-dependent properties of Au/Sm 2 O 3 /n-GaN MIS junction with a high-k rare-earth Sm 2 O 3 as interlayer , 2017 .

[12]  Minghua Tang,et al.  Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films , 2014 .

[13]  John F. Conley,et al.  Resistive switching in zinc–tin-oxide , 2013 .

[14]  Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices , 2013, IEEE Electron Device Letters.

[15]  S. Seo,et al.  Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes , 2009 .

[16]  Z. Hassan,et al.  Sm2O3 gate dielectric on Si substrate , 2010 .

[17]  S. Ren,et al.  Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface , 2018 .

[18]  Hiroshi Iwai,et al.  Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements , 2007 .

[19]  Chien-Min Cheng,et al.  Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current , 2018, Microelectron. Reliab..