A 1.8 V-to-2.5 V MIPI RFFE slave interface CMOS circuit

The MIPI RFFE slave interface circuit including Power-on-Reset (PoR), SCLK receiver and SDATA bidirectional transceiver has been implemented with a CMOS 250 nm process. Simulation results show that the designed circuit has SDATA output transition time (for rise and fall) of shorter than 3.3 ns at a full-speed rate of 26 MHz, which satisfies the timing requirement (<; 6.5 ns) by the specification of MIPI RFFE version 1.10. The target load capacitance that the designed MIPI RFFE slave interface circuit drives is 26 pF for the configuration of one master and eight slaves.

[1]  Jinsung Choi,et al.  A Multimode/Multiband Power Amplifier With a Boosted Supply Modulator , 2010, IEEE Transactions on Microwave Theory and Techniques.

[2]  R. Jacob Baker,et al.  CMOS Circuit Design, Layout, and Simulation , 1997 .

[3]  Erik Dahlman,et al.  4G: LTE/LTE-Advanced for Mobile Broadband , 2011 .

[4]  R. Jacob Baker,et al.  Special Purpose CMOS Circuits , 2011 .

[5]  Sang-Gug Lee,et al.  A Long Reset-Time Power-On Reset Circuit With Brown-Out Detection Capability , 2011, IEEE Transactions on Circuits and Systems II: Express Briefs.

[6]  Timothy A. Thomas,et al.  LTE-advanced: next-generation wireless broadband technology [Invited Paper] , 2010, IEEE Wireless Communications.