论文信息 - Electrical characteristics of Schottky diodes based on semi-insulating CdTe single crystals

Electrical characteristics of Schottky diodes based on semi-insulating CdTe single crystals

Electrical properties of Schottky diodes fabricated by vacuum evaporation of Al on the surface of semi-insulating p-like CdTe single crystals have been investigated. The current-voltage characteristics (CVCs) of the diodes have an unconventional pattern which is manifested in the absence of rectification at both low forward bias voltages ( 5V) is associated with the injection of minority carriers into the bulk of the crystals.

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