论文信息 - Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAM

Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAM

Single-Event Upset (SEU) response of a bipolar low-power Schottky-diode-clamped TTL static RAM has been observed using Br ions in the 100-240 MeV energy range and 0 ions in the 20-100 MeV range. These data complete the experimental verification of circuit-simulation SEU modeling for this device. The threshold for onset of SEU has been observed by the variation of energy, ion species and angle of incidence. The results obtained from the computer circuit-simulation modeling and experimental model verification demonstrate a viable methodology for modeling SEU in bipolar integrated circuits.

P. Thieberger | G. A. Soli | J. A. Zoutendyk | L. S. Smith | H. E. Wegner

[1] L. S. Smith,et al. Experimental Determination of Single-Event Upset (SEU) as a Function of Collected Charge in Bipolar Integrated Circuits , 1984, IEEE Transactions on Nuclear Science.

[2] John A. Zoutendyk. Modeling of Single-Event Upset in Bipolar Integrated Circuits , 1983, IEEE Transactions on Nuclear Science.

[3] P. Thieberger. The Brookhaven double MP facility: Recent developments and plans for the future , 1984 .

[4] R. Middleton. A survey of negative ions from a cesium sputter source , 1977 .

[5] J. Zoutendyk. Accelerators for critical experiments involving single-particle upset in solid-state microcircuits☆ , 1985 .