EBIC, EBSD and TEM study of grain boundaries in multicrystalline silicon cast from metallurgical feedstock
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M. Acciarri | R. Holmestad | J. Walmsley | S. Binetti | M. Acciarri | J. Libal | R. Holmestad | H. Nordmark | M. Di Sabatino | J. Libal | S. Binetti | E. J. Ovrelid | J. C. Walmsley | H. Nordmark | M. Di Sabatino | E. Ovrelid
[1] B. Lai,et al. Transition metal co-precipitation mechanisms in silicon , 2007 .
[2] Deren Yang,et al. Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon , 2005 .
[3] C. Colliex,et al. Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundary , 1989 .
[4] Takashi Sekiguchi,et al. EBIC study on the electrical activity of stacking faults in silicon , 1996 .
[5] Mong-Song Liang,et al. Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric , 1996 .
[6] D. Macdonald,et al. Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers , 2005 .
[7] T. Sekiguchi,et al. Electron-beam-induced current study of grain boundaries in multicrystalline silicon , 2004 .
[8] M. Werner,et al. Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon , 1999 .
[9] M. Pickett,et al. Transition metal interaction and Ni-Fe-Cu-Si phases in silicon , 2007 .
[10] X. Portier,et al. Nickel Precipitation at the Grain Boundary of a Silicon Bicrystal , 1996 .
[11] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[12] Deren Yang,et al. Influence of copper precipitation on oxygen precipitation in Czochralski silicon , 2004 .
[13] G. Nouet,et al. EBIC and TEM analysis of the electrical activity of Σ = 25 and Σ = 13 silicon bicrystals after thermal treatments , 1994 .
[14] Andrew G. Glen,et al. APPL , 2001 .
[15] M. Pickett,et al. Complex intermetallic phase in multicrystalline silicon doped with transition metals , 2006 .
[16] M. Kittler,et al. EBIC study of recombination activity of oxygen precipitation related defects in si , 1996 .
[17] T. Sekiguchi,et al. Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon , 2007 .
[18] M. Pickett,et al. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration , 2006 .
[19] K. Wambach,et al. Effect of P‐induced gettering on extended defects in n‐type multicrystalline silicon , 2007 .
[20] T. Sekiguchi,et al. Relationship between Electrical Activity and Grain Boundary Structural Configuration in Polycrystalline Silicon , 1999 .