Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer.

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

[1]  Ute Zschieschang,et al.  Mixed Self‐Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits , 2010, Advanced materials.

[2]  H. Wong,et al.  VLSI-compatible carbon nanotube doping technique with low work-function metal oxides. , 2014, Nano letters.

[3]  Qing Hua Wang,et al.  Room-temperature molecular-resolution characterization of self-assembled organic monolayers on epitaxial graphene. , 2009, Nature chemistry.

[4]  Ananth Dodabalapur,et al.  High-speed, inkjet-printed carbon nanotube/zinc tin oxide hybrid complementary ring oscillators. , 2014, Nano letters.

[5]  L. Lauhon,et al.  Quantitatively enhanced reliability and uniformity of high-κ dielectrics on graphene enabled by self-assembled seeding layers. , 2013, Nano letters.

[6]  Mark C. Hersam,et al.  Sorting carbon nanotubes by electronic structure using density differentiation , 2006, Nature nanotechnology.

[7]  Benjamin C. K. Tee,et al.  Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits , 2014, Proceedings of the National Academy of Sciences.

[8]  H.-S. Philip Wong,et al.  Carbon nanotube computer , 2013, Nature.

[9]  Qing Hua Wang,et al.  Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers. , 2011, ACS nano.

[10]  A. Javey,et al.  Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films. , 2015, Nano letters.

[11]  P. Avouris,et al.  Carbon-based electronics. , 2007, Nature nanotechnology.

[12]  R. Baughman,et al.  Carbon Nanotubes: Present and Future Commercial Applications , 2013, Science.

[13]  S. Barlow,et al.  Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal–organic species , 2014 .

[14]  Tobin J Marks,et al.  Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control. , 2013, Nano letters.

[15]  E. Vogel,et al.  Controlled Doping of Large‐Area Trilayer MoS2 with Molecular Reductants and Oxidants , 2015, Advanced materials.

[16]  Yan Li,et al.  Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices. , 2009, Nano letters.

[17]  Kai Xiao,et al.  n-Type field-effect transistors made of an individual nitrogen-doped multiwalled carbon nanotube. , 2005, Journal of the American Chemical Society.

[18]  S. Barlow,et al.  n-Doping of organic electronic materials using air-stable organometallics: a mechanistic study of reduction by dimeric sandwich compounds. , 2012, Chemistry.

[19]  Ali Javey,et al.  Carbon nanotube electronics--moving forward. , 2013, Chemical Society reviews.

[20]  A Javey,et al.  Polymer functionalization for air-stable n-type carbon nanotube field-effect transistors. , 2001, Journal of the American Chemical Society.

[21]  C. Kim,et al.  Solution-processed carbon nanotube thin-film complementary static random access memory. , 2015, Nature nanotechnology.

[22]  Z. Bao,et al.  Effective Solution‐ and Vacuum‐Processed n‐Doping by Dimers of Benzimidazoline Radicals , 2014, Advanced materials.

[23]  T. Fujigaya,et al.  Development of n-type cobaltocene-encapsulated carbon nanotubes with remarkable thermoelectric property , 2015, Scientific Reports.

[24]  Richard Martel,et al.  Controlling doping and carrier injection in carbon nanotube transistors , 2002 .

[25]  Peter John Burke,et al.  High-performance semiconducting nanotube inks: progress and prospects. , 2011, ACS nano.

[26]  Chongwu Zhou,et al.  Air-stable conversion of separated carbon nanotube thin-film transistors from p-type to n-type using atomic layer deposition of high-κ oxide and its application in CMOS logic circuits. , 2011, ACS nano.

[27]  Davood Shahrjerdi,et al.  High-performance air-stable n-type carbon nanotube transistors with erbium contacts. , 2013, ACS nano.

[28]  H. Dai,et al.  Modulated chemical doping of individual carbon nanotubes. , 2000, Science.

[29]  Lianmao Peng,et al.  Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics. , 2010, Nano letters.

[30]  A. Rinzler,et al.  An Integrated Logic Circuit Assembled on a Single Carbon Nanotube , 2006, Science.

[31]  L. Lauhon,et al.  Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. , 2012, ACS nano.

[32]  Jeong-O Lee,et al.  Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors , 2008 .

[33]  Zhibin Yu,et al.  User-interactive electronic skin for instantaneous pressure visualization. , 2013, Nature materials.

[34]  Young Hee Lee,et al.  Chemically doped random network carbon nanotube p-n junction diode for rectifier. , 2011, ACS nano.

[35]  Wei Zhang,et al.  Aerosol jet printed, low voltage, electrolyte gated carbon nanotube ring oscillators with sub-5 μs stage delays. , 2013, Nano letters.

[36]  M. Hersam.  Progress towards monodisperse single-walled carbon nanotubes. , 2008, Nature nanotechnology.

[37]  Song Guo,et al.  n‐Doping of Organic Electronic Materials using Air‐Stable Organometallics , 2012, Advanced materials.

[38]  Sang Won Lee,et al.  Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors. , 2011, ACS nano.

[39]  P. Maitlis,et al.  Electrochemical generation of 19- and 20-electron rhodocenium complexes and their properties , 1993 .

[40]  Yan Li,et al.  Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage. , 2008, Nano letters.

[41]  K. Jiang,et al.  Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics. , 2015, Nanoscale.

[42]  W. Yu,et al.  Reduction-controlled viologen in bisolvent as an environmentally stable n-type dopant for carbon nanotubes. , 2009, Journal of the American Chemical Society.

[43]  K. Hata,et al.  Systematic Conversion of Single Walled Carbon Nanotubes into n-type Thermoelectric Materials by Molecular Dopants , 2013, Scientific Reports.