Circuit-level modeling of soft errors in integrated circuits

This paper describes the steps necessary to develop a soft-error methodology that can be used at the circuit-simulation level for accurate nominal soft-error prediction. It addresses the role of device simulations, statistical simulation, analytical soft-error rate (SER) model development, and SER-model calibration. The resulting approach is easily automated and generic enough to be applied to any type of circuit for estimation of the nominal SER.

[1]  K. Soumyanath,et al.  Measurements and analysis of SER tolerant latch in a 90 nm dual-Vt CMOS process , 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

[2]  Y. Yagil,et al.  A systematic approach to SER estimation and solutions , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[3]  D.S. Yaney,et al.  Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliability , 1979, IEEE Transactions on Electron Devices.

[4]  F. W. Sexton,et al.  Contribution of device simulation to SER understandfng , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[5]  J. Maiz,et al.  Alpha-SER modeling and simulation for sub-0.25 /spl mu/m CMOS technology , 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

[6]  Toshihiro Sugii,et al.  Measurements and analysis of neutron-reaction-induced charges in a silicon surface region , 1997 .

[7]  Vivek De,et al.  Measurements and analysis of SER-tolerant latch in a 90-nm dual-V/sub T/ CMOS process , 2004 .

[8]  Changhong Dai,et al.  Impact of CMOS process scaling and SOI on the soft error rates of logic processes , 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

[9]  R. R. O'Brien,et al.  Dynamics of Charge Collection from Alpha-Particle Tracks in Integrated Circuits , 1981, 19th International Reliability Physics Symposium.

[10]  N. Seifert,et al.  Timing vulnerability factors of sequentials , 2004, IEEE Transactions on Device and Materials Reliability.

[11]  S. Satoh,et al.  Simple method for estimating neutron-induced soft error rates based on modified BGR model , 1999, IEEE Electron Device Letters.

[12]  J. Tschanz,et al.  Neutron soft error rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0.25-/spl mu/m to 90-nm generation , 2003, IEEE International Electron Devices Meeting 2003.

[13]  S. Kirkpatrick Modeling diffusion and collection of charge from ionizing radiation in silicon devices , 1979, IEEE Transactions on Electron Devices.

[14]  G. Srinivasan,et al.  Accurate, predictive modeling of soft error rate due to cosmic rays and chip alpha radiation , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

[15]  Tang,et al.  Cascade statistical model for nucleon-induced reactions on light nuclei in the energy range 50 MeV-1 GeV. , 1990, Physical review. C, Nuclear physics.

[16]  P. Hazucha,et al.  Cosmic-ray soft error rate characterization of a standard 0.6-/spl mu/m CMOS process , 2000, IEEE Journal of Solid-State Circuits.

[17]  T. May,et al.  Alpha-particle-induced soft errors in dynamic memories , 1979, IEEE Transactions on Electron Devices.