A comparison of charge dynamics in the reverse-conducting RC IGBT and Bi-mode Insulated Gate Transistor BiGT

In this paper we present the analysis of charge dynamics in the reverse conducting (RC)-IGBT and the Bi mode Insulating Gate Transistor (BiGT). The differences and similarities between the two device concepts are analyzed with the aid of 2D device simulations using a realistic 3.3kV device model. The influence of the anode shorts dimensioning and buffer design on the on-state characteristics and the snap-back effect is discussed and the advantages of the hybrid BiGT structure are demonstrated. It is shown that the application of the BiGT structure decouples the conventional RC-IGBT design trade-offs with respect to the diode and IGBT areas in relation to the snap-back effect. Main design principles for optimal IGBT and diode performance are outlined.

[1]  Arnost Kopta,et al.  The Next Generation 3300V BIGT HiPak modules with current ratings exceeding 2000A , 2010 .

[2]  H. Takahashi,et al.  1200V reverse conducting IGBT , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[4]  U. Schlapbach,et al.  The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

[5]  M. Rahimo,et al.  The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[6]  Satyen Mukherjee,et al.  Analysis and characterization of the segmented anode LIGBT , 1993 .