论文信息 - The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition

The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition

In situ optical reflectance transients reveal that the morphology evolution of the initial low-temperature buffer layer strongly influences the structural and electrical quality of the high-temperature GaN films. Moreover, the morphology evolution of that buffer layer, specifically evolution of the spatial and orientational distributions of the nuclei, is strongly affected by H2. The growth conditions for which surface smoothness is maintained throughout the two-step growth do not necessarily produce the best quality final GaN films; instead, there may be an optimal roughness and incubation period en route to the best quality final films.

[1] T. Kistenmacher,et al. THE EFFECT OF THERMAL ANNEALING ON GAN NUCLEATION LAYERS DEPOSITED ON (0001) SAPPHIRE BY METALORGANIC CHEMICAL VAPOR DEPOSITION , 1994 .

[2] Shuji Nakamura,et al. The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[3] James S. Speck,et al. Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN , 1996 .

[4] P. Koidl,et al. Chemical vapour deposition and characterization of smooth {100}-faceted diamond films , 1993 .

[5] M. Khan,et al. A microstructural comparison of the initial growth of AlN and GaN layers on basal plane sapphire and sic substrates by low pressure metalorganic chemical vapor deposition , 1995 .

[6] William G. Breiland,et al. Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor , 1991 .

[7] S. Nakamura. Analysis of Real-Time Monitoring Using Interference Effects , 1991 .

[8] H. Amano,et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .

[9] H. Amano,et al. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate , 1988 .

[10] S. Hersee,et al. The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire , 1995 .