An ultra-low voltage RRAM read-out technique employing dithering principles

A hardware-friendly, ultra-low voltage read-out technique for multi-level RRAM technologies inspired by the dithering techniques from image processing is proposed and studied. We lay out the fundamental principles behind our adaptation of the approach, present results from hardware tests, carry out sensitivity analysis through simulations in order to study its l imitations. Successful discrimination between a few resistive state levels is shown at a read-out voltage of just 10 mV, thus proving the concept.