Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier transport effect for efficiency droop suppression. The lattice-matched AlGaInN quaternary alloys with different compositions, thicknesses, and positions were employed as thin barrier layers (1-2 nm) surrounding the InGaN QW in LED structures. The increased effective barrier heights of AlGaInN thin barrier led to suppression of carrier leakage as compared to conventional InGaN QW LEDs with GaN barrier only. The current work provides a comprehensive simulation taking into consideration the carrier transport in self-consistent manner, and the finding indicated the use of thin layers of AlGaInN or AlInN barriers as sufficient for suppressing the droop in InGaN-based QW LEDs. The efficiency of InGaN QW LED with the insertion of lattice-matched Al0.82In0.18N thin barrier layers showed the least droop phenomenon at high current density among the investigated LEDs. The thickness study indicated that a thin layer (<; 2 nm) of large-bandgap material in the barrier region was sufficient for efficiency droop suppression.

[1]  Yen-Kuang Kuo,et al.  Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers , 2011 .

[2]  K. Delaney,et al.  Auger recombination rates in nitrides from first principles , 2009, 0904.3559.

[3]  Nelson Tansu,et al.  Experimental evidence of carrier leakage in InGaAsN quantum-well lasers , 2003 .

[4]  E. Schubert,et al.  Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop , 2008 .

[5]  Hsiang-Chen Wang,et al.  Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structures , 2007 .

[6]  Michael R. Krames,et al.  Auger recombination in InGaN measured by photoluminescence , 2007 .

[7]  C. Menoni,et al.  Experimental Evidence of the Impact of Nitrogen on Carrier Capture and Escape Times in InGaAsN/GaAs Single Quantum Well , 2012, IEEE Photonics Journal.

[8]  Nelson Tansu,et al.  Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. , 2011, Optics express.

[9]  Hao-Chung Kuo,et al.  Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer , 2010 .

[10]  Weng W. Chow,et al.  Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model , 2010 .

[11]  S. G. Bishop,et al.  The incorporation of arsenic in GaN by metalorganic chemical vapor deposition , 1998 .

[12]  D. A. Sannikov,et al.  Blue light emitting diode internal and injection efficiency , 2012 .

[13]  M. Weyers,et al.  Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes , 2008 .

[14]  Lai Wang,et al.  An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes , 2012 .

[15]  E. Fred Schubert,et al.  Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes , 2007 .

[16]  E. Fred Schubert,et al.  Origin of efficiency droop in GaN-based light-emitting diodes , 2007 .

[17]  E. Kioupakis,et al.  Auger recombination and free-carrier absorption in nitrides from first principles , 2010 .

[18]  Yen-Kuang Kuo,et al.  Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer. , 2010, Optics letters.

[19]  S. Lutgen,et al.  On the importance of radiative and Auger losses in GaN-based quantum wells , 2008 .

[20]  E. F. Schubert,et al.  Current crowding in GaN/InGaN light emitting diodes on insulating substrates , 2001 .

[21]  E. Fred Schubert,et al.  Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers , 2009 .

[22]  M.H. Crawford,et al.  LEDs for Solid-State Lighting: Performance Challenges and Recent Advances , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[23]  A. Podoltsev,et al.  Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes , 2010 .

[24]  J. Piprek.  Efficiency droop in nitride‐based light‐emitting diodes , 2010 .

[25]  Y. Kudryk,et al.  Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading , 2011 .

[26]  Ronald A. Arif,et al.  Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes , 2010, DRC 2010.

[27]  Hongping Zhao,et al.  Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes , 2013, Journal of Display Technology.

[28]  Hongxing Jiang,et al.  Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials , 2011 .

[29]  Y. Kuo,et al.  Blue InGaN Light-Emitting Diodes With Multiple GaN-InGaN Barriers , 2012, IEEE Journal of Quantum Electronics.

[30]  Jorg Hader,et al.  Temperature-dependence of the internal efficiency droop in GaN-based diodes , 2011 .

[31]  S. Nakamura,et al.  InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .

[32]  Hadis Morkoç,et al.  Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells , 2008 .

[33]  Hao-Chung Kuo,et al.  Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells , 2010 .

[34]  N. Tansu,et al.  High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy , 2011 .

[35]  Jerry R. Meyer,et al.  Band parameters for nitrogen-containing semiconductors , 2003 .

[36]  R. I. Gorbunov,et al.  Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs , 2006 .

[37]  Y. Kuo,et al.  Advantages of blue InGaN light-emitting diodes with AlGaN barriers. , 2010, Optics letters.

[38]  Hadis Morkoç,et al.  On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers , 2008 .

[39]  Liping Guo,et al.  Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) , 2007 .

[40]  S. Denbaars,et al.  Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices , 2012 .

[41]  Hao-Chung Kuo,et al.  Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier , 2011 .

[42]  M. Craford,et al.  Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting , 2007, Journal of Display Technology.

[43]  P. Blood,et al.  Time Evolution of the Screening of Piezoelectric Fields in InGaN Quantum Wells , 2005, IEEE Journal of Quantum Electronics.

[44]  T. Mukai,et al.  Optical and structural studies in InGaN quantum well structure laser diodes , 2001 .

[45]  Michael R. Krames,et al.  Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes , 2008 .

[46]  P. Douglas Yoder,et al.  Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes , 2010 .

[47]  E. Schubert,et al.  Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency , 2012 .

[48]  Nelson Tansu,et al.  Current injection efficiency of InGaAsN quantum-well lasers , 2005 .

[49]  Yen-Kuang Kuo,et al.  Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes. , 2012, Optics letters.

[50]  E. Fred Schubert,et al.  Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes , 2009 .

[51]  Y. Kuo,et al.  Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers , 2012 .

[52]  K. Delaney,et al.  Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes , 2011 .

[53]  Hao-Chung Kuo,et al.  Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers , 2011 .

[54]  Russell D. Dupuis,et al.  Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer , 2010 .

[55]  K. Evans,et al.  Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates , 2012 .

[56]  Rajendra Dahal,et al.  InGaN/GaN multiple quantum well solar cells with long operating wavelengths , 2009 .