A faster power MOSFET device with electrical stress treatment
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[1] Akiko Ohata,et al. Evaluation of performance degradation factors for high-k gate dielectrics in N-channel MOSFETs , 2004 .
[2] Guido Groeseneken,et al. Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction , 1999 .
[3] D. Vuillaume,et al. Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections , 1999 .
[4] G. Dearnaley. Stored charge in oxide layer structures , 1970 .
[5] A. Paccagnella,et al. Incidence of Oxide and interface degradation on MOSFET performance , 2004 .
[6] W. Ryan,et al. Electrical breakdown of M.O.S. structures and its dependence upon the oxidation process , 1969 .
[7] Mingzhen Xu,et al. A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd , 2001, Microelectron. Reliab..
[8] Jordi Suñé,et al. Electron transport through broken down ultra-thin SiO2 layers in MOS devices , 2004, Microelectron. Reliab..
[9] Karl Hess,et al. Theory of channel hot-carrier degradation in MOSFETs , 1999 .
[10] Jinhong Yuan,et al. Experimental evaluation of device degradation subject to oxide soft breakdown , 2001 .
[11] Breakdown and stress-induced oxide degradation mechanisms in MOSFETs , 2002 .