Interstitial aggregates and a new model for the I1/W optical centre in silicon
暂无分享,去创建一个
Sven Öberg | Patrick R. Briddon | Jonathan P. Goss | S. Öberg | R. Jones | P. Briddon | J. Goss | Robert Jones | B. J. Coomer | B. Coomer
[1] G. Davies,et al. The 1018 meV (W or I1) vibronic band in silicon , 1987 .
[2] Extended Si |P[311|P] defects , 1996, cond-mat/9611145.
[3] Seiji Takeda,et al. SELF-INTERSTITIAL CLUSTERING IN CRYSTALLINE SILICON , 1997 .
[4] S. Estreicher,et al. NOBLE-GAS-RELATED DEFECTS IN SI AND THE ORIGIN OF THE 1018 MEV PHOTOLUMINESCENCE LINE , 1997 .
[5] A. Kaminskiǐ,et al. Uniaxial-stress-induced alignment of the B804 (J-lines) centres in silicon , 1998 .
[6] M. Nakamura,et al. Oxygen participation in the formation of the photoluminescence W center and the center’s origin in ion-implanted silicon crystals , 1998 .
[7] Y. H. Lee,et al. Silicon di-interstitial in ion-implanted silicon , 1998 .
[8] S. Öberg,et al. Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon , 1999 .
[9] A. Hallén,et al. Migration energy for the silicon self-interstitial , 1999 .
[10] J. Weber. Defect generation during plasma treatment of semiconductors , 1991 .
[11] Andrew G. Glen,et al. APPL , 2001 .
[12] R. Elliman,et al. Activation energy for the photoluminescence W center in silicon , 1992 .