论文信息 - Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K - 字舞流文

Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K

X. Garros | M. Cassé | M. Vinet | A. Juge | T. Meunier | E. Vincent | S. Franceschi | P. Galy | F. Gaillard | L. Contamin | L. Contamin | S. D. Franceschi