Pure CMOS one-time programmable memory using gate-ox anti-fuse

A pure CMOS one-time programmable (PCOP) memory is developed as electrically programmable nonvolatile memory for general purposes. The memory cell consists of a thin-oxide PMOS transistor, a thick-oxide NMOS barrier transistor and a selection transistor. It is programmed with the dielectric breakdown of the thin gate oxide. A high voltage generator is built-in so as to be programmable after packaging.

[1]  A. Toriumi,et al.  Dielectric breakdown mechanism of thin-SiO/sub 2/ studied by the post-breakdown resistance statistics , 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

[2]  P. Mortini,et al.  One time programmable drift antifuse cell reliability , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

[3]  M. Bohr,et al.  A PROM element based on salicide agglomeration of poly fuses in a CMOS logic process , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[4]  S.K. Iyer,et al.  Electrically programmable fuse (eFUSE) using electromigration in silicides , 2002, IEEE Electron Device Letters.

[5]  Kwyro Lee,et al.  Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse , 2003 .

[6]  R. Degraeve,et al.  Consistent model for short-channel nMOSFET after hard gate oxide breakdown , 2002 .