Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory
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Alessandro Calderoni | Stefano Ambrogio | Simone Balatti | Daniele Ielmini | Nirmal Ramaswamy | Zhongqiang Wang | Scott Sills | S. Ambrogio | S. Balatti | D. Ielmini | A. Calderoni | N. Ramaswamy | S. Sills | Zhongqiang Wang
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