论文信息 - InP-based enhancement-mode pseudomorphic HEMT with strained In/sub 0.45/Al/sub 0.55/As barrier and In/sub 0.75/Ga/sub 0.25/As channel layers - 字舞流文

InP-based enhancement-mode pseudomorphic HEMT with strained In/sub 0.45/Al/sub 0.55/As barrier and In/sub 0.75/Ga/sub 0.25/As channel layers

J. Ao | Shiyong Liu | Q. Zeng | Xianjie Li | Chun-Guang Liang | Yonglin Zhao | Wei-Ji Liu | Xian-jie Li