论文信息 - Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate - 字舞流文

Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate

Hong‐du Liu | S. Lan | Zhang-Yuan Chen | Wan-jing Xu | Cheng-Qing Yang

[1] Yong‐Hoon Cho,et al. The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid‐phase epitaxy , 1992 .

[2] Zhang Zhang,et al. The Influence of Al+++ Substitution for Fe+++ in M-Type Ba Ferrite Powder on the Intrinsic Coercivity HcJ , 1990 .

[3] J. Nishizawa,et al. STOICHIOMETRY-DEPENDENT DEEP LEVELS IN P-TYPE INP , 1990 .

[4] D. Lang. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .