Optical characterization of AlGaN-GaN-AlGaN quantum wells
暂无分享，去创建一个
[1] R. M. Kolbas,et al. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition , 1991 .
[2] R. Kolbas,et al. Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells , 1990 .
[3] R. M. Kolbas,et al. Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers , 1988 .
[4] J. Palmour,et al. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide , 1988 .
[5] M. Khan,et al. Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition , 1983 .
[6] M. Khan,et al. Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition , 1983 .
[7] S. Misawa,et al. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy , 1982 .
[8] H. Raidt,et al. Growth and properties of AlxGa1–xN epitaxial layers , 1978 .
[9] J. W. Matthews,et al. Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .
[10] Marc Ilegems,et al. Donor-acceptor pair recombination in GaN , 1971 .
[11] J. Pankove,et al. OPTICAL ABSOPTION OF GaN , 1970 .
[12] Jacques I. Pankove,et al. Luminescence in GaN , 1973 .