Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates.
暂无分享,去创建一个
Haiding Sun | Tien Khee Ng | Boon S Ooi | Xiaohang Li | Feng Wu | Davide Priante | Bilal Janjua | A. Albadri | B. Ooi | M. El-Desouki | D. Anjum | A. Alyamani | T. Ng | Xiaohang Li | Feng Wu | Haiding Sun | B. Janjua | Chao Zhao | A. Alhamoud | D. Priante | Chao Zhao | Dalaver H Anjum | Abdulrahman M Albadri | Ahmed Y Alyamani | Munir M El-Desouki | Abdullah A Alhamoud | A. A. Alhamoud
[1] W. Lun,et al. Degradation mechanism beyond device self-heating in high power light-emitting diodes , 2011 .
[2] Christos Thomidis,et al. AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy , 2011 .
[3] M. Weyers,et al. Advances in group III-nitride-based deep UV light-emitting diode technology , 2010 .
[4] Z. Mi,et al. Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates , 2014 .
[5] S. Alterovitz,et al. Spectroscopic ellipsometry studies of HF treated Si (100) surfaces , 1993 .
[6] Seoung-Hwan Park,et al. Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization , 2000 .
[7] Oliver Ambacher,et al. Growth and applications of Group III-nitrides , 1998 .
[8] Chao Shen,et al. Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. , 2016, Nano letters.
[9] Michael S. Shur,et al. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% , 2012 .
[10] Seki Inoue,et al. Epitaxial growth of AlN films on Rh ultraviolet mirrors , 2007 .
[11] V. Favre-Nicolin,et al. Elastic strain relaxation in GaN/AlN nanowire superlattice , 2010 .
[12] O Brandt,et al. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film. , 2015, Nano letters.
[13] Z. Mi,et al. Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers. , 2015, Nano letters.
[14] A. Pofelski,et al. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics , 2016 .
[15] Shun Lien Chuang,et al. Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects , 2000 .
[16] Rami T. Elafandy,et al. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics. , 2016, Nano letters.
[17] Siddharth Rajan,et al. Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. , 2012, Nano letters.
[18] Z. Mi,et al. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. , 2015, Nature nanotechnology.
[19] H. Lüth,et al. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy. , 2007, Nano letters.
[20] Jong-In Shim,et al. Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence , 2012 .
[21] Hirofumi Kan,et al. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode , 2008 .
[22] B. Gayral,et al. Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires. , 2016, Nano letters.
[23] Zetian Mi,et al. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures , 2016 .
[24] Y. Taniyasu,et al. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres , 2006, Nature.
[25] Zetian Mi,et al. Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation‐Free Planar Ultraviolet Photonic Device Applications , 2016, Advanced materials.
[26] Matthew F Chisholm,et al. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence. , 2016, Nanoscale.
[27] Charles M. Lieber,et al. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. , 2006, Nano letters.
[28] Z. Mi,et al. An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band , 2015 .
[29] Asif Khan,et al. Ultraviolet light-emitting diodes based on group three nitrides , 2008 .
[30] Z. Mi,et al. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon. , 2015, Nano letters.
[31] Zetian Mi,et al. High efficiency AlGaN deep ultraviolet light emitting diodes on silicon , 2015, Photonics West - Optoelectronic Materials and Devices.
[32] Zetian Mi,et al. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers , 2016 .
[33] Bruno Gayral,et al. Quantum-confined Stark effect in GaN/AlN quantum dots in nanowires , 2009 .
[34] M. Mori,et al. Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy , 1997 .
[35] R. Myers,et al. Nanowire LEDs grown directly on flexible metal foil , 2016 .
[36] Fan Yang,et al. Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices. , 2015, Small.
[37] V. Consonni,et al. In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires , 2010, Nanotechnology.
[38] D. J. Lockwood,et al. Elastic relaxation of dry-etched Si/SiGe quantum dots , 1998 .
[39] P. Bhattacharya,et al. Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics. , 2011, Nano letters.
[40] Shun Lien Chuang,et al. CRYSTAL-ORIENTATION EFFECTS ON THE PIEZOELECTRIC FIELD AND ELECTRONIC PROPERTIES OF STRAINED WURTZITE SEMICONDUCTORS , 1999 .
[41] P. Bhattacharya,et al. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. , 2010, Nano letters.
[42] Z. Mi,et al. Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1−xN nanowire based light emitting diodes , 2013, Nanotechnology.
[43] Hiroto Sekiguchi,et al. Ultraviolet GaN‐based nanocolumn light‐emitting diodes grown on n‐(111) Si substrates by rf‐plasma‐assisted molecular beam epitaxy , 2008 .
[44] Kai Cui,et al. High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy , 2012 .
[45] R. Myers,et al. Tunnel junction enhanced nanowire ultraviolet light emitting diodes , 2015 .
[46] R. Klie,et al. Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1−xN active regions , 2014, Nanotechnology.
[47] P. Vogl,et al. nextnano: General Purpose 3-D Simulations , 2007, IEEE Transactions on Electron Devices.
[48] Tien Khee Ng,et al. True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light , 2016 .
[49] M. Djavid,et al. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources , 2015, Scientific Reports.
[50] K. Delaney,et al. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes , 2011 .
[51] R. Klie,et al. Mixed polarity in polarization-induced p-n junction nanowire light-emitting diodes. , 2013, Nano letters.