论文信息 - Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs

Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs

This paper describes a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFETs. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFETs whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes into account horizontal and vertical carrier confinement in a silicon narrow wire, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.

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