Performance and reliability of InGaAsP superluminescent diode
暂无分享,去创建一个
[1] O. Wada,et al. Performance and reliability of high radiance InGaAsP/InP DH LED́s operating in the 1.15-1.5 µm wavelength region , 1982 .
[2] Masato Kawahara,et al. High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers , 1987 .
[3] High‐power 1.3 μm superluminescent diode , 1989 .
[4] Y. H. Zhuang,et al. 1.5 μm InGaAsP/InP buried crescent superluminescent diode on a p‐InP substrate , 1990 .
[5] Yuichi Matsushima,et al. Effect of mirror facets on lasing characteristics of distributed feedback InGaAsP/InP laser diodes at 1.5 µm range , 1984 .
[6] C. A. Burrus,et al. A stripe-geometry double-heterostructure amplified-spontaneous-emission (superluminescent) diode , 1973 .
[7] C. Y. Boisrobert,et al. Peculiar features of InGaAsP DH superluminescent diodes , 1989 .
[8] Yoshio Noguchi,et al. High‐power, high‐efficiency 1.3 μm superluminescent diode with a buried bent absorbing guide structure , 1989 .
[9] D. Marcuse,et al. Computer model of a superluminescent LED with lateral confinement , 1981 .
[10] H. Suhara,et al. High coupled power 1.3 μm edge-emitting light-emitting diode with a rear window and an integrated absorber , 1988 .