Optoelectronic memristor for neuromorphic computing

With the need of the internet of things, big data, and artificial intelligence, creating new computing architecture is greatly desired for handling data-intensive tasks. Human brain can simultaneously process and store information, which would reduce the power consumption while improve the efficiency of computing. Therefore, the development of brain-like intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence. Memristor, as the fourth fundamental circuit element, is an ideal synaptic simulator due to its integration of storage and processing characteristics, and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains. In particular, memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth, ultrafast data operation speed, low power consumption, and low cross-talk, which is important for building efficient brain-like computing networks. Herein, we review recent progresses in optoelectronic memristor for neuromorphic computing, including the optoelectronic memristive materials, working principles, applications, as well as the current challenges and the future development of the optoelectronic memristor.

[1]  Young Sun,et al.  All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing , 2018, Advanced Functional Materials.

[2]  Qiyuan He,et al.  Graphene-based electronic sensors , 2012 .

[3]  J. Yang,et al.  Robust memristors based on layered two-dimensional materials , 2018, 1801.00530.

[4]  Aibing Yu,et al.  Correction: Advances on tungsten oxide based photochromic materials: strategies to improve their photochromic properties , 2018, Journal of Materials Chemistry C.

[5]  Hyun Jae Kim,et al.  Resistive Switching Properties through Iodine Migrations of a Hybrid Perovskite Insulating Layer , 2017 .

[6]  Pooi See Lee,et al.  A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure , 2016 .

[7]  G. Konstantatos,et al.  Recent Progress and Future Prospects of 2D‐Based Photodetectors , 2018, Advanced materials.

[8]  Xiaoning Zhao,et al.  Memristors with organic‐inorganic halide perovskites , 2019, InfoMat.

[9]  Y. Liu,et al.  Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor , 2012 .

[10]  Q. Vu,et al.  Two‐Terminal Multibit Optical Memory via van der Waals Heterostructure , 2018, Advanced materials.

[11]  Karl Deisseroth,et al.  Optogenetics in Neural Systems , 2011, Neuron.

[12]  Juwon Lee,et al.  Monolayer optical memory cells based on artificial trap-mediated charge storage and release , 2017, Nature Communications.

[13]  H-S Philip Wong,et al.  Artificial optic-neural synapse for colored and color-mixed pattern recognition , 2018, Nature Communications.

[14]  Jang‐Sik Lee,et al.  Flexible Hybrid Organic-Inorganic Perovskite Memory. , 2016, ACS nano.

[15]  A. Fujishima,et al.  Photochromic and electrochromic behavior of electrodeposited MoO3 thin films , 1990 .

[16]  Yang Chai,et al.  Low‐Voltage, Optoelectronic CH3NH3PbI3−xClx Memory with Integrated Sensing and Logic Operations , 2018 .

[17]  S. Hecht,et al.  Modulating the Charge Transport in 2D Semiconductors via Energy‐Level Phototuning , 2019, Advanced materials.

[18]  Yu Chen,et al.  Polymer memristor for information storage and neuromorphic applications , 2014 .

[19]  Weijie Qiu,et al.  Hybrid optoelectronic synaptic functionality realized with ion gel-modulated In2O3 phototransistors , 2019, Organic Electronics.

[20]  S. Burdette,et al.  Photoisomerization in different classes of azobenzene. , 2012, Chemical Society reviews.

[21]  Hong-Sik Kim,et al.  A Highly Transparent Artificial Photonic Nociceptor , 2019, Advanced materials.

[22]  S. Nau,et al.  Organic Non‐Volatile Resistive Photo‐Switches for Flexible Image Detector Arrays , 2015, Advanced materials.

[23]  Kaiyou Wang,et al.  Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods , 2018 .

[24]  Young Min Song,et al.  Bioinspired Artificial Eyes: Optic Components, Digital Cameras, and Visual Prostheses , 2018 .

[25]  D. Ang,et al.  Optical reset modulation in the SiO 2 /Cu conductive-bridge resistive memory stack , 2017 .

[26]  Wuhong Xue,et al.  An Oxide Schottky Junction Artificial Optoelectronic Synapse. , 2019, ACS nano.

[27]  Lih-Juann Chen,et al.  Dynamic evolution of conducting nanofilament in resistive switching memories. , 2013, Nano letters.

[28]  C. D. Wang,et al.  Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures , 1998 .

[29]  L. K. Castelano,et al.  Light sensitive memristor with bi-directional and wavelength-dependent conductance control , 2016 .

[30]  Su‐Ting Han,et al.  Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching , 2018, Advanced materials.

[31]  Ru Huang,et al.  Light‐Tunable Nonvolatile Memory Characteristics in Photochromic RRAM , 2017 .

[32]  Rong Zhang,et al.  A light-stimulated synaptic device based on graphene hybrid phototransistor , 2017 .

[33]  Sang Yoon Lee,et al.  Printable organometallic perovskite enables large-area, low-dose X-ray imaging , 2017, Nature.

[34]  Xiang Zhang,et al.  A graphene-based broadband optical modulator , 2011, Nature.

[35]  Lin Gan,et al.  Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2. , 2018, Small.

[36]  A. Ciesielski,et al.  Chemical sensing with 2D materials. , 2018, Chemical Society reviews.

[37]  Lei Liu,et al.  Two-dimensional multibit optoelectronic memory with broadband spectrum distinction , 2018, Nature Communications.

[38]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[39]  Kristy A. Campbell,et al.  An Optically Gated Transistor Composed of Amorphous M + Ge2Se3 (M = Cu or Sn) for Accessing and Continuously Programming a Memristor , 2019, ACS Applied Electronic Materials.

[40]  Joondong Kim,et al.  All-Oxide-Based Highly Transparent Photonic Synapse for Neuromorphic Computing. , 2018, ACS applied materials & interfaces.

[41]  A. Sinitskii,et al.  Optoelectrical Molybdenum Disulfide (MoS2)--Ferroelectric Memories. , 2015, ACS nano.

[42]  Experimental studies on the defect states at the interface between nanocrystalline CdSe and amorphous SiOx , 2000 .

[43]  Yihong Wu,et al.  An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions , 2015, Advanced materials.

[44]  Yan Wang,et al.  Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure , 2018, Advanced materials.

[45]  S. Slesazeck,et al.  Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors. , 2014, ACS applied materials & interfaces.

[46]  Hong Wang,et al.  Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions , 2018, Advanced Electronic Materials.

[47]  Lei Zhang,et al.  Self‐Suspended Nanomesh Scaffold for Ultrafast Flexible Photodetectors Based on Organic Semiconducting Crystals , 2018, Advanced materials.

[48]  Zhengguo Xiao,et al.  Energy‐Efficient Hybrid Perovskite Memristors and Synaptic Devices , 2016 .

[49]  M. Hofmann,et al.  Hybrid Optical/Electric Memristor for Light-Based Logic and Communication. , 2019, ACS Applied Materials and Interfaces.

[50]  M. Mitchell Waldrop,et al.  The chips are down for Moore’s law , 2016, Nature.

[51]  Sen Song,et al.  Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges , 2019, Advanced materials.

[52]  Jianwen Zhao,et al.  Optoelectronic Properties of Printed Photogating Carbon Nanotube Thin Film Transistors and Their Application for Light-Stimulated Neuromorphic Devices. , 2019, ACS applied materials & interfaces.

[53]  Hua Zhang,et al.  Graphene-based electrochemical sensors. , 2013, Small.

[54]  Run‐Wei Li,et al.  Organic Biomimicking Memristor for Information Storage and Processing Applications , 2016 .

[55]  Juerg Leuthold,et al.  Atomic Scale Plasmonic Switch. , 2016, Nano letters.

[56]  Yongsuk Choi,et al.  Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity , 2016, Advanced materials.

[57]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[58]  Shuangchen Ruan,et al.  Phosphorene nano-heterostructure based memristors with broadband response synaptic plasticity , 2018 .

[59]  L. Chua Memristor-The missing circuit element , 1971 .

[60]  Ho Won Jang,et al.  Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius. , 2017, ACS applied materials & interfaces.

[61]  S. Zhuiykov,et al.  A bioinspired optoelectronically engineered artificial neurorobotics device with sensorimotor functionalities , 2019, Nature Communications.

[62]  R. Waser,et al.  Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures , 2015 .

[63]  Fei Zeng,et al.  Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO , 2012, Advanced materials.

[64]  Sven Höfling,et al.  Electro-photo-sensitive memristor for neuromorphic and arithmetic computing , 2016 .

[65]  Wei D. Lu,et al.  On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics , 2018, Advanced materials.

[66]  Chunsen Liu,et al.  A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications , 2018, Nature Nanotechnology.

[67]  Di Chen,et al.  An Artificial Flexible Visual Memory System Based on an UV‐Motivated Memristor , 2018, Advanced materials.

[68]  Shuangyi Zhao,et al.  Hybrid Structure of Silicon Nanocrystals and 2D WSe2 for Broadband Optoelectronic Synaptic Devices , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

[69]  Shilei Dai,et al.  Light‐Stimulated Artificial Synapses Based on 2D Organic Field‐Effect Transistors , 2019, Advanced Electronic Materials.

[70]  Ming Liu,et al.  Light-Gated Memristor with Integrated Logic and Memory Functions. , 2017, ACS nano.

[71]  H.-S. Philip Wong,et al.  Face classification using electronic synapses , 2017, Nature Communications.

[72]  R. Waser,et al.  Mechanism for bipolar switching in a Pt / TiO 2 / Pt resistive switching cell , 2009 .

[73]  B. Lundqvist,et al.  Quantum origin of the oxygen storage capability of ceria. , 2002, Physical review letters.

[74]  Gunuk Wang,et al.  Photonic Organolead Halide Perovskite Artificial Synapse Capable of Accelerated Learning at Low Power Inspired by Dopamine‐Facilitated Synaptic Activity , 2018, Advanced Functional Materials.

[75]  Shimeng Yu,et al.  Optoelectronic resistive random access memory for neuromorphic vision sensors , 2019, Nature Nanotechnology.

[76]  Keiji Tanaka,et al.  Amorphous Chalcogenide Semiconductors and Related Materials , 2011 .

[77]  Mary O'Neill,et al.  Reversible optical switching memristors with tunable STDP synaptic plasticity: a route to hierarchical control in artificial intelligent systems. , 2017, Nanoscale.

[78]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[79]  J. Yang,et al.  A Family of Electronically Reconfigurable Nanodevices , 2009 .

[80]  Gennadi Bersuker,et al.  White-light-induced disruption of nanoscale conducting filament in hafnia , 2015 .

[81]  W. Lu,et al.  Optogenetics-Inspired Tunable Synaptic Functions in Memristors. , 2018, ACS nano.

[82]  Jack C. Lee,et al.  Thinnest Nonvolatile Memory Based on Monolayer h‐BN , 2019, Advanced materials.

[83]  Wei D. Lu,et al.  Iodine Vacancy Redistribution in Organic–Inorganic Halide Perovskite Films and Resistive Switching Effects , 2017, Advanced materials.

[84]  González,et al.  Photoluminescence and absorption studies of defects in CdTe and ZnxCd1-xTe crystals. , 1993, Physical review. B, Condensed matter.

[85]  H. Thorp,et al.  Electrochemical reduction of fullerenes in the presence of O2 and H2O: Polyoxygen adducts and fragmentation of the C60 framework , 1991 .

[86]  Guochun Yang,et al.  Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors. , 2018, Small.

[87]  L. Fan,et al.  Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO2 Film. , 2016, ACS applied materials & interfaces.

[88]  Ye Wu,et al.  Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors , 2017, Nano Research.

[89]  Caiyun Chen,et al.  Broadband photodetectors based on graphene-Bi2Te3 heterostructure. , 2015, ACS Nano.

[90]  Alexandros Emboras,et al.  Nanoscale plasmonic memristor with optical readout functionality. , 2013, Nano letters.

[91]  Wei Zhang,et al.  Photo-induced halide redistribution in organic–inorganic perovskite films , 2016, Nature Communications.

[92]  F. Zeng,et al.  Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device , 2018 .

[93]  Qi Liu,et al.  Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM , 2012, Advanced materials.

[94]  Jianhai Zhang,et al.  Simulation of retinal ganglion cell response using fast independent component analysis , 2018, Cognitive Neurodynamics.

[95]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.

[96]  P. Ilanchezhiyan,et al.  MoS2 memristor with photoresistive switching , 2016, Scientific Reports.

[97]  T. Hasegawa,et al.  Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers , 2012, Advanced materials.

[98]  K. Yager,et al.  Photomechanical Effects in Azo-Polymers Studied by Neutron Reflectometry , 2006 .

[99]  Su‐Ting Han,et al.  Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics , 2019, Advanced Electronic Materials.

[100]  Yan Wang,et al.  Near-Infrared Annihilation of Conductive Filaments in Quasiplane MoSe2 /Bi2 Se3 Nanosheets for Mimicking Heterosynaptic Plasticity. , 2019, Small.