论文信息 - PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation

PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation

Using devices with well passivated interfaces and reduced electron trapping, it is demonstrated that significant interface-state generation occurs during PBTI stress in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks. These observations on capacitors imply that the impact of interface-state generation on mobility and subthreshold-degradation need to be monitored in III-V nFET in addition to electron trapping in the gate stack.

[1] Andreas Kerber,et al. Stress-induced leakage current and defect generation in nFETs with HfO2/TiN gate stacks during positive-bias temperature stress , 2009, 2009 IEEE International Reliability Physics Symposium.

[2] P ? ? ? ? ? ? ? % ? ? ? ? , 1991 .

[3] Muhammad Ashraful Alam,et al. A comprehensive model of PMOS NBTI degradation , 2005, Microelectron. Reliab..

[4] P. McIntyre,et al. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks. , 2017, ACS applied materials & interfaces.

[5] L. Pantisano,et al. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics , 2003, IEEE Electron Device Letters.

[6] P. McIntyre,et al. Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors , 2017 .

[7] 李幼升,et al. Ph , 1989 .

[8] E. Cartier,et al. Fundamental aspects of HfO2-based high-k metal gate stack reliability and implications on tinv-scaling , 2011, 2011 International Electron Devices Meeting.

[9] V. Narayanan,et al. Fundamental understanding and optimization of PBTI in nFETs with SiO2/HfO2 gate stack , 2006, 2006 International Electron Devices Meeting.