Temperature variation of EPR linewidth of Gd3+ and estimation of spin-lattice relaxation time of Nd3+ in NdF3 single crystals

EPR (X-band) linewidths of the Gd3+ ion in NdF3 and LaF3 single crystals in the temperature range 140 to 510 K are investigated. The mechanism of spin–lattice modulated narrowing is adapted to explain the temperature dependence of the Gd3+ EPR linewidths in the presence of the Kramers host Nd3+ ions (4f3, 4I9/2). The spin–lattice relaxation time (τ′1) of the host ions Nd3+ in Gd3+-doped NdF3 single crystal is calculated, using the equation for crystals containing two different species of paramagnetic ions. On a etudie des largeurs des raies de la RPE (bande X) de l'ion Gd3+ dans des monocristaux NdF3 et LaF3 dans un intervalle de temperature de 140 a 510 K. Un modele de la contraction modulee spin-reseau a ete adopte afin d'expliquer la dependence des largeurs de la raie de la RPE de l'ion Gd3+ de la temperature en presence des ions hǒtes de Kramers Nd3+ (4f3,4I9/2). Au moyen de l'equation pour le cristal contenant des ions paramagnetique differents, on a calcule le temps de relaxation spin–reseau (τ′1) des ions hǒtes Nd3+ dans le cristal NdF3 dope par des ions Gd3+.

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