A New Method for Accurate Extraction of Source Resistance and Effective Mobility in Nanoscale Multifinger nMOSFETs

A new method is is developed for accurate extraction of the effective mobility (μ<sub>eff</sub>) in the multifinger nMOSFETs with various poly-to-poly (PO-PO) spaces. The wide PO-PO space intends to increase the tensile stress from a contact etching stop layer (CESL) and yields higher μ<sub>eff</sub> in the nMOSFETs. However, the source resistance (R<sub>S</sub>) emerges as a critical parasitic element in the multifinger devices with a large finger number. The wide PO-PO space generally leads to the further increase of R<sub>S</sub>, which may offset μ<sub>eff</sub> improvement and degrade transconductance (g<sub>m</sub>). A two-end source line is proposed to reduce RS and the impact on g<sub>m</sub>. The complicated layout-dependent effects containing the CESL strain, R<sub>S</sub>, and 3-D fringing capacitances bring a crucial challenge to the μ<sub>eff</sub> extraction. In this paper, a distributed transmission line model is derived for a reliable determination of R<sub>S</sub>, which is a key to the realization of accurate extraction of μ<sub>eff</sub> and layout-dependent effects in multifinger devices.

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