A stacked capacitor with an MOCVD-(Ba,Sr)TiO/sub 3/ film and a RuO/sub 2//Ru storage node on a TiN-capped plug for 4 Gbit DRAMs and beyond
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N. Kasai | K. Nakajima | Y. Kojima | H. Koga | H. Yabuta | M. Yoshida | K. Takemura | M. Suzuki | S. Yamamichi | Y. Miyasaka | P. Lesaicherre | H. Yamaguchi | T. Sakuma | T. Iizuka | S. Sone | Y. Kato | S. Nishimoto