Detectors for lightwave communication

Telecommunication with light waves today stands at the threshold of widespread use. Silicon photodiodes, particularly those of the avalanche type, offer speed, efficiency, sensitivity and reliability—both for the systems now in development and future ones at longer wavelengths.

[1]  K. Johnson,et al.  High-speed photodiode signal enhancement at avalanche breakdown voltage , 1965 .

[2]  W. A. Steyert,et al.  LATTICE DYNAMICAL STUDIES USING ABSOLUTE MEASUREMENTS OF THE LAMB-MOSSBAUER RECOIL-FREE FRACTION , 1964 .

[3]  H. Melchior,et al.  Signal and noise response of high speed germanium avalanche photodiodes , 1966 .

[4]  Y. Mizushima,et al.  Silicon avalanche photodiodes with low multiplication noise and high-speed response , 1976, IEEE Transactions on Electron Devices.

[5]  R. L. Bell,et al.  3-5 compound photocathodes: A new family of photoemitters with greatly improved performance , 1970 .

[6]  S. L. Miller Avalanche Breakdown in Germanium , 1955 .

[7]  J. Conradi,et al.  IVA-4 silicon reach-through avalanche photodiodes for fiber optic applications , 1975 .

[8]  R. Eden,et al.  Heterojunction III—V alloy photodetectors for high-sensitivity 1.06-µm optical receivers , 1975, Proceedings of the IEEE.

[9]  L. D’asaro,et al.  MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA‐FREE CARRIER MULTIPLICATION , 1965 .

[10]  J. J. Scheer,et al.  GaAs-Cs: A new type of photoemitter , 1965 .

[11]  A. Chynoweth,et al.  Uniform Silicon p‐n Junctions. I. Broad Area Breakdown , 1960 .

[12]  R. Mcintyre The distribution of gains in uniformly multiplying avalanche photodiodes: Theory , 1972 .

[13]  H. Melchior Sensitive high speed photodetectors for the demodulation of visible and near infrared light , 1973 .

[14]  Thomas P. Pearsall,et al.  Impact ionization rates for electrons and holes in GaAs1−xSbx alloys , 1976 .

[15]  H. Melchior,et al.  Photodetectors for optical communication systems , 1970 .

[16]  R. Miller,et al.  Secondary-emission amplification at microwave frequencies , 1965 .

[17]  C. M. Wolfe,et al.  Unequal electron and hole impact ionization coefficients in GaAs , 1974 .

[18]  T. Pearsall,et al.  Impact ionization coefficients for electrons and holes in In0.14Ga0.86As , 1975 .

[19]  C. Burrus,et al.  IVA-3 high-speed Schottky-barrier photodiode in LPE In x Ga 1-x As for 1.0 µm to 1.1 µm wavelength region , 1975 .

[20]  J. Escher,et al.  High‐quantum‐efficiency photoemission from an InGaAsP photocathode , 1976 .

[21]  H. W. Ruegg,et al.  An optimized avalanche photodiode , 1967 .

[22]  R. Mcintyre Multiplication noise in uniform avalanche diodes , 1966 .

[23]  C. M. Wolfe,et al.  Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm , 1974 .

[24]  R. P. Riesz High Speed Semiconductor Photodiodes , 1962 .