论文信息 - Angular resolved photoemission from surface states on reconstructed (100) GaAs surfaces

Angular resolved photoemission from surface states on reconstructed (100) GaAs surfaces

Two prominent surface states have been observed in angular resolved photoemission measurements on reconstructed (2*4) and (4*2) GaAs (100) surfaces, which were grown in situ by molecular beam epitaxy. Changes brought about by adsorption of H2 and O2, and also by annealing, indicate the presence on each type of surface of both an As-associated and a Ga-associated surface state. It is also shown that the symmetry of the repeated surface Brillouin zone of the As-stable (2*4) reconstructed surface is observed for the As-associated surface state.

B. Joyce | P. Larsen | J. Neave

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