Angular‐resolved ion‐beam sputtering apparatus for large‐area deposition

A new apparatus to utilize the directional nature of ion‐beam sputter deposition is presented. Employment of an angular setting slit together with translational substrate scanning enables large‐area deposition, keeping the angular settings unchanged. The merits of this apparatus were demonstrated step by step on a typical example: CdTe obliquely deposited films known for the anomolous photovoltaic effect.

[1]  R. M. Bradley,et al.  Theory of ripple topography induced by ion bombardment , 1988 .

[2]  T. C. Huang,et al.  Magnetic and structural properties of high rate dual ion‐beam sputtered NiFe films (invited) , 1987 .

[3]  A. Tago,et al.  Well‐defined uniaxial anisotropy in iron film formed by ion beam sputtering , 1987 .

[4]  K. Takahashi,et al.  Ion-beam sputtering apparatus with a simplified accelerator system for deposition of thin films , 1987 .

[5]  Ki-ichi Nakamura,et al.  Synthesis of Superconducting Beryllium Thin Film by Ion-Beam Sputtering , 1987 .

[6]  T. Motohiro,et al.  Characteristic erosion of silica by oblique argon ion beam bombardment , 1987 .

[7]  E. Kay,et al.  Effect of energetic neutralized noble gas ions on the structure of ion beam sputtered thin metal films , 1987 .

[8]  M. Kitabatake,et al.  Hydrogen‐free SiN films deposited by ion beam sputtering , 1986 .

[9]  K. Müller Monte Carlo calculation for structural modifications in ion‐assisted thin film deposition due to thermal spikes , 1986 .

[10]  Y. Nagai,et al.  Alloy surface segregation effect on the angular distribution of Ni-Fe sputtered particles , 1986 .

[11]  T. Motohiro,et al.  Applications of Monte Carlo simulation in the analysis of a sputter‐deposition process , 1986 .

[12]  C. Pellet,et al.  Angular distributions of heavy particles emitted from a Si target during an ion beam sputter process , 1986 .

[13]  K. Takei,et al.  Preparation of Multi-Layered Tungsten-Carbon Films by Ion-Beam Sputtering , 1985 .

[14]  A. Tago,et al.  Magnetic properties of ion beam sputtered Co-Zr and Co-Zr-Re amorphous films , 1985 .

[15]  M. Yamaga,et al.  Deposition of rust proof Iron thin films with soft magnetic properties by dual ion beam sputtering , 1985 .

[16]  A. L. Greer,et al.  Ion beam sputtering apparatus for fabrication of compositionally modulated materials , 1985 .

[17]  T. Ohwaki,et al.  Secondary ion emission from Si under nitrogen ion bombardment , 1985 .

[18]  Y. Nagai,et al.  Ar+ Ion Bombardment Effect on Composition Variation in Ni-Fe Film Formed by Ion Beam Sputtering , 1985 .

[19]  T. Motohiro,et al.  Geometrical factors of argon incorporation in SiO2 films deposited by ion beam sputtering , 1984 .

[20]  G. Fortunato,et al.  Dual-ion-beam sputtering technique for the production of hydrogenated amorphous silicon , 1984 .

[21]  R. Somekh The thermalization of energetic atoms during the sputtering process , 1984 .

[22]  D. Bouchier,et al.  Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam Sputtering , 1983 .

[23]  G. Proto,et al.  Improved step coverage by ion beam resputtering , 1981 .

[24]  C. Weissmantel Ion beam deposition of special film structures , 1981 .

[25]  J. Pankove The Anomalous Photovoltaic Effect , 1980, September 16.

[26]  R. Bhattacharya Impurities in Thin Films Produced by Ion Beam Sputtering , 1980 .

[27]  J. Harper,et al.  Combined ion beam deposition and etching for thin film studies , 1979 .

[28]  R. Castellano,et al.  Ion‐beam deposition of thin films of ferroelectric lead zirconate titanate (PZT) , 1979 .

[29]  J. C. Fan,et al.  Preparation of Sn‐doped In2O3 (ITO) films at low deposition temperatures by ion‐beam sputtering , 1979 .

[30]  J. Franks Properties and applications of saddle‐field ion sources , 1979 .

[31]  K. Ahn,et al.  Characteristics of ion‐beam‐sputtered thin films , 1979 .

[32]  J. Vossen,et al.  Thin Film Processes , 1979 .

[33]  D. Bouchier,et al.  Investigation of ion‐beam‐sputtered Nb‐Ti thin films by complementary use of backscattering and nuclear‐reaction microanalysis , 1978 .

[34]  P. Reinhardt,et al.  Electrical and structural properties of ion beam sputtered silver-SiO2 cermet films , 1978 .

[35]  C. Weissmantel,et al.  Some trends in preparing film structures by ion beam methods , 1978 .

[36]  R. Castellano Reactive ion beam sputtering of thin films of lead, zirconium and titanium , 1977 .

[37]  S. Ingrey,et al.  Fabrication of optical waveguides by ion-beam sputtering , 1976 .

[38]  R. H. Williams,et al.  A mechanism for the anomalous photovoltaic effect in cadmium telluride , 1975 .

[39]  Hideomi Onishi,et al.  Photovoltaic polarity of CdTe films obliquely deposited in vacuum , 1974 .

[40]  K. Chopra,et al.  Duoplasmatron Ion Beam Source for Vacuum Sputtering of Thin Films , 1967 .

[41]  H. Kukimoto,et al.  High-Voltage Photovoltaic Effect in Evaporated CdTe Films , 1962 .

[42]  G. Wehner Velocities of Sputtered Atoms , 1959 .

[43]  B. Goldstein,et al.  High‐Voltage Photovoltaic Effect , 1959 .

[44]  B. Goldstein Properties of Photovoltaic Films of CdTe , 1958 .

[45]  L. Pensak High-voltage photovoltaic effect , 1958 .