Defect-related photoluminescence of epitaxial cuins2

[1]  U. Reislöhner,et al.  Photoluminescence of epitaxial CuGaS2 on Si(111): model for intrinsic defect levels , 2004 .

[2]  G. Gobsch,et al.  Optical properties of epitaxial CuGaS2 layers on Si(111) , 2003 .

[3]  A. Chuvilin,et al.  Structural properties of MBE grown Cu(In,Ga)S2 layers on Si , 2003 .

[4]  U. Kaiser,et al.  Microstructure of epitaxial CuGaS2 on Si(111) , 2003 .

[5]  U. Kaiser,et al.  Structural and optical properties of epitaxial CuGaS2 films on Si substrates , 2003 .

[6]  G. Gobsch,et al.  Epitaxial growth of CuGaS2 on Si(111) , 2002 .

[7]  U. Reislöhner,et al.  Hetero-epitaxial growth of Cu(In,Ga)S2 on Si substrates , 2002 .

[8]  H. Metzner,et al.  Sulphur-terminated silicon surfaces for the epitaxial growth of chalcopyrite semiconductors , 2001 .

[9]  B. Svensson,et al.  Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen , 2000 .

[10]  H. Metzner,et al.  Structural and electronic properties of epitaxially grown CuInS2 films , 2000 .

[11]  D. Bräunig,et al.  Investigation of the influence of silver on the crystal growth of CuInS2 thin films , 2000 .

[12]  Rommel Noufi,et al.  Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin‐film solar cells , 1999 .

[13]  J. Krustok,et al.  Origin of the deep center photoluminescence in CuGaSe2 and CuInS2 crystals , 1999 .

[14]  R. Scheer,et al.  Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments , 1997 .

[15]  H. Metzner,et al.  Epitaxial growth of CuInS2 on sulphur terminated Si(111) , 1996 .

[16]  H. Metzner,et al.  Thin CuInS2 films by three-source molecular beam deposition , 1995 .

[17]  G. Gobsch,et al.  Structural and optical properties of CuInS2 bulk crystals , 1994 .

[18]  N. Dietz,et al.  Defect identification in semiconductors by Brewster angle spectroscopy , 1993 .

[19]  J. Bloem,et al.  Luminescence of CuInS2 , 1982 .