Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer
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Hiroshi Iwai | Nobuyuki Sugii | Chunmeng Dou | Kuniyuki Kakushima | Parhat Ahmet | Akira Nishiyama | Kazuo Tsutsui | Kenji Natori | Takeo Hattori | H. Iwai | T. Hattori | N. Sugii | A. Nishiyama | P. Ahmet | K. Kakushima | K. Natori | K. Tsutsui | C. Dou
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