论文信息 - Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs - 字舞流文

Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs

Yu Weihua | Lv Xin | Lv Yuanjie | Dun Shaobo | Feng Zhi-Hong | Luo Xiaobin

[1] M. Higashiwaki,et al. AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers , 2006, IEEE Electron Device Letters.

[2] A. Z. Markos,et al. Improved Modeling of GaN HEMTs on Si Substrate for Design of RF Power Amplifiers , 2011, IEEE Transactions on Microwave Theory and Techniques.

[3] S. Russo,et al. Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance , 2007, IEEE Transactions on Electron Devices.

[4] C. Law,et al. An Improved Pinchoff Equivalent Circuit Model for Determining PHEMT Model Parameters for Millimeterwave Application , 2002 .

[5] R. S. Pengelly,et al. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs , 2012, IEEE Transactions on Microwave Theory and Techniques.