Hole transport in c-plane InGaN-based green laser diodes

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

[1]  Han-Youl Ryu,et al.  High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers , 2006 .

[2]  Shuji Nakamura,et al.  Measurement of electron overflow in 450 nm InGaN light-emitting diode structures , 2009 .

[3]  Feng Zhang,et al.  Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region , 2014 .

[4]  D. S. Sizov,et al.  Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[5]  E. Fred Schubert,et al.  Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes , 2011 .

[6]  Erdan Gu,et al.  Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection , 2015 .

[7]  Z. Q. Li,et al.  Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects , 2006, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices.

[8]  Lai Wang,et al.  Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization , 2010 .

[9]  S. Denbaars,et al.  AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm , 2009 .

[10]  A. Avramescu,et al.  Current dependence of electro-optical parameters in green and blue (AlIn)GaN laser diodes , 2012 .

[11]  Michael E. Levinshtein,et al.  Carrier mobility model for GaN , 2003 .

[12]  Takashi Miyoshi,et al.  510–515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate , 2009 .

[13]  E. Fred Schubert,et al.  Origin of efficiency droop in GaN-based light-emitting diodes , 2007 .

[14]  Michael R. Krames,et al.  Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes , 2008 .

[15]  Weimin Du,et al.  Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes , 2012 .

[16]  Mathew C. Schmidt,et al.  High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates , 2010 .

[17]  Feng Zhang,et al.  Green laser diodes with low operation voltage obtained by suppressing carbon impurity in AlGaN: Mg cladding layer , 2016 .

[18]  Suzuki,et al.  First-principles calculations of effective-mass parameters of AlN and GaN. , 1995, Physical review. B, Condensed matter.

[19]  Adrian Avramescu,et al.  InGaN laser diodes with 50 mW output power emitting at 515 nm , 2009 .

[20]  Hiroshi Nakajima,et al.  Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar {2021} GaN Substrates , 2012 .

[21]  J Yang,et al.  Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes. , 2014, Optics express.

[22]  Shun Lien Chuang,et al.  Amplified spontaneous emission and carrier pinning in laser diodes , 1993 .

[23]  X. D. Hu,et al.  An improved multi-layer stopper in a GaN-based laser diode , 2009 .

[24]  K. Katayama,et al.  531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {202̄1} Free-Standing GaN Substrates , 2009 .

[25]  Isamu Akasaki,et al.  P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY , 1994 .

[26]  Mark S. Hybertsen,et al.  Simulation of semiconductor quantum well lasers , 2000 .

[27]  E. Schubert,et al.  On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes , 2011 .

[28]  A. Avramescu,et al.  Carrier transport in green AlInGaN based structures on c-plane substrates , 2013 .

[29]  Jianjun Zhu,et al.  Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue-violet laser diodes , 2015 .

[30]  Heqing Wang,et al.  Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes , 2008 .

[31]  Rajaram Bhat,et al.  Impact of Carrier Transport on Aquamarine–Green Laser Performance , 2010 .

[32]  Yen-Kuang Kuo,et al.  Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance , 2004 .

[33]  E. M. Azoff.  Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors , 1989 .