论文信息 - (Invited) Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS - 字舞流文

(Invited) Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS

H. Bender | N. Waldron | M. Caymax | M. Heyns | K. Temst | J. Mitard | S. Sioncke | T. Conard | T. Hoffman | M. Meuris | K. Martens | D. Lin | A. Delabie | G. Brammertz | W. Tseng | Wei-e Wang | Jian-Hong Lin | A. Vantomme | Wei-E. Wang