Low noise amplifier modules from 220–270 GHz

We present the design and performance of low noise amplifier modules in the WR3 frequency band (220-325 GHz). E-plane split waveguide blocks are used with 25 μm gallium arsenide membrane radial probes to couple signal into and out of 35 nm gate length indium phosphide monolithic millimeter-wave integrated circuit (MMIC) amplifiers. Design, fabrication and testing of the probe transitions and amplifier modules are discussed. For a cascode amplifier module cryogenically cooled to 20 K, we measure a minimum noise temperature of 120 K at 258 GHz and noise temperatures less than 145 K between 234-268 GHz. To our knowledge, these results are the lowest LNA noise temperatures at these frequencies reported to date.

[1]  W.R. Deal,et al.  A 340–380 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC Packaging , 2009, IEEE Microwave and Wireless Components Letters.

[2]  A. Leuther,et al.  Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications , 2011, 2011 IEEE 9th International New Circuits and systems conference.

[3]  T. Gaier,et al.  Two-Port Vector Network Analyzer Measurements in the 218–344- and 356–500-GHz Frequency Bands , 2006, IEEE Transactions on Microwave Theory and Techniques.

[4]  V. Radisic,et al.  WR1.5 Silicon Micromachined Waveguide Components and Active Circuit Integration Methodology , 2012, IEEE Transactions on Microwave Theory and Techniques.

[5]  Matthias Seelmann-Eggebert,et al.  Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz , 2011, IEEE Journal of Solid-State Circuits.

[6]  L. Samoska.  An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime , 2011, IEEE Transactions on Terahertz Science and Technology.

[7]  Choonsup Lee,et al.  A Broadband 835–900-GHz Fundamental Balanced Mixer Based on Monolithic GaAs Membrane Schottky Diodes , 2010, IEEE Transactions on Microwave Theory and Techniques.

[8]  L. Samoska,et al.  160-270-GHz InP HEMT MMIC Low-Noise Amplifiers , 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[9]  M. Barsky,et al.  Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure , 2007, IEEE Microwave and Wireless Components Letters.

[10]  Munkyo Seo,et al.  InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz , 2011, IEEE Journal of Solid-State Circuits.

[11]  A. Leuther,et al.  High-gain submillimeter-wave mHEMT amplifier MMICs , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[12]  A. Leuther,et al.  Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar , 2008, IEEE Journal of Solid-State Circuits.

[13]  T. Gaier,et al.  A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz , 2008, IEEE Transactions on Microwave Theory and Techniques.

[14]  A. Leuther,et al.  20 NM metamorphic HEMT WITH 660 GHZ FT , 2011, IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials.

[15]  V. Jain,et al.  InP HBTs for THz frequency integrated circuits , 2011, IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials.

[16]  Ghassan Yassin,et al.  A Full-Height Waveguide to Thin-Film Microstrip Transition with Exceptional RF Bandwidth and Coupling Efficiency , 2003 .