PROPOSAL TO THE ISOLDE AND NEUTRON TIME-OF-FLIGHT EXPERIMENTS COMMITTEE (INTC) CRYSTAL FIELD INVESTIGATIONS OF RARE EARTH DOPED WIDE BAND GAP SEMICONDUCTORS

Crystal field investigations play a central role in the studies of rare earth doped semiconductors. Optical stark level spectroscopy and lattice location studies of radioactive rare earth isotopes implanted at ISOLDE have provided important insight into these systems during the last years. It has been shown that despite a major site preference of the probe atoms in the lattice, several defect configurations do exist. These sites are visible in the optical spectra but their origin and nature aren’t deducible from these spectra alone. Hyperfine measurements on the other hand should reveal these defect configurations and yield the parameters necessary for a description of the optical properties at the atomic scale. In order to study the crystal field with this alternative approach, we propose a new concept for perturbed γγ-angular correlation (PAC) experiments at ISOLDE based on digital signal processing in contrast to earlier analog setups. The general functionality of the spectrometer is explained and its advantages are pointed to selected experiments with several rare earth isotopes implanted in wide band gap semiconductors, motivated by open questions important for a fundamental comprehension of the optical and magnetic properties of such systems. For a comprehensive picture of the physical situation the PAC measurements will be combined with photo-luminescence (PL) and emission channeling (EC) lattice location studies.

[1]  John A. Gardner,et al.  Actual concepts of digital PAC-spectroscopy , 2008 .

[2]  H. Shen,et al.  GaN doped with neodymium by plasma-assisted molecular beam epitaxy , 2008 .

[3]  John M. Zavada,et al.  Prospects for rare earth doped GaN lasers on Si , 2007 .

[4]  B. Hourahine,et al.  Rare earth doped III-nitrides for optoelectronics , 2006 .

[5]  Andreas D. Wieck,et al.  Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN , 2006 .

[6]  R. Vianden,et al.  Temperature dependent PAC studies with the rare earth 172Lu in ZnO , 2006 .

[7]  Kenji Watanabe,et al.  Characterization of luminous-cubic boron-nitride single-crystals doped with Eu3+ and Tb3+ ions , 2005 .

[8]  A. Bensaoula,et al.  Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN , 2005, Microelectron. J..

[9]  O Brandt,et al.  Colossal magnetic moment of Gd in GaN. , 2005, Physical review letters.

[10]  The Isolde Collaboration,et al.  The Rare Earth PAC Probe 172Lu in Wide Band-Gap Semiconductors , 2004 .

[11]  M. F. Reid,et al.  Spectra and energy levels of Gd3+(4f7) in AlN , 2004 .

[12]  U. Vetter.  Lanthanide Doped Wide Band Gap Semiconductors: Intra-4f Luminescence and Lattice Location Studies , 2004 .

[13]  A. Vantomme,et al.  Recent Emission Channeling Studies in Wide Band Gap Semiconductors , 2004 .

[14]  A. Vantomme,et al.  Lattice location and optical activation of rare earth implanted GaN , 2003 .

[15]  H. Hofsäss,et al.  Lattice location studies of rare earth impurities in 3C–, 4H– and 6H–SiC , 2003 .

[16]  W. Jadwisienczak,et al.  Optical properties of Yb ions in GaN epilayer , 2003 .

[17]  W. Jadwisienczak,et al.  Spectra and energy levels of Tb3+(4f 8) in GaN , 2002 .

[18]  W. Jadwisienczak,et al.  Spectroscopic properties of Sm3+(4f 5) in GaN , 2002 .

[19]  Stefan Kröll,et al.  Quantum computer hardware based on rare-earth-ion-doped inorganic crystals , 2002 .

[20]  W. Jadwisienczak,et al.  Cathodoluminescence study of GaN doped with Tb , 2001 .

[21]  A. Steckl,et al.  Multiple color capability from rare earth-doped gallium nitride , 2001 .

[22]  I. Brown,et al.  Visible emission from AlN doped with Eu and Tb ions , 2001 .

[23]  Ian G. Brown,et al.  Photoluminescence and cathodoluminescence of GaN doped with Pr , 2000 .

[24]  Ian G. Brown,et al.  Visible cathodoluminescence of GaN doped with Dy, Er, and Tm , 1999 .

[25]  K. Binnemans,et al.  Chapter 167 Spectral intensities of f-f transitions , 1998 .

[26]  Hans Hofsäss,et al.  Emission channeling and blocking , 1991 .

[27]  A. Axmann,et al.  1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon , 1983 .

[28]  C. Jørgensen.  Modern aspects of ligand field theory , 1971 .

[29]  Robert A. Satten,et al.  Spectra and energy levels of rare earth ions in crystals , 1968 .