Charge sensitivity of radio frequency single-electron transistor

A theoretical analysis of the charge sensitivity of the radio frequency single-electron transistor (rf-SET) is presented. We use the “orthodox” approach and consider the case when the carrier frequency is much less than I/e where I is the typical current through rf-SET. The optimized noise-limited sensitivity is determined by the temperature T, and at low T it is only 1.4 times worse than the sensitivity of conventional single-electron transistor.

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